Numerical Analysis Of Thermal Effects Of Semiconductor Materials Based On Continuous Wave Laser Irradiation

Based on the heat conduction theory, the thermal effects of semiconductormaterials were simulated by the software COMSOL Multiphysics. Obtaining thetemperature distribution, the thermal damage threshold and thermal stress distribution ofsemiconductor materials GaAs and InSb. The thermal parameters with temperature, thelaser irradiation time, the laser parameters, the thermal convection and thermal radiationimpact on thermal effects were discussed.(1) Two-dimensional axis symmetric transient physical model of GaAs irradiatedby Gauss laser was established on the basis of heat conduction theory. The heatconduction equations was solved by the software COMSOL Multiphysics. Obtaining thecurve of material surface temperature, the relationship between the temperature at thecenter of the light spot and material thickness, the relationship between thresholddamage time of GaAs and the incident light power density. The thermal convection andthermal radiation impact on the temperature of the surface center were discussed. Thetheoretical analyzing result is in accordance with the relative experimental result，so itproves that the laser irradiation effect model is correct．(2) Cylindrical coordinates model of InSb irradiated by circular laser wasestablished on the basis of heat conduction theory and the thermoelastic theory, the heatconduction equation for two-dimensional cylindrical coordinate system was solved bythe software COMSOL Multiphysics. Obtaining the temperature distribution and thethermal stress distribution. The laser irradiation time, the laser power density and beamradius impact on the temperature rise were discussed. Comparing the temperature rise ofof semiconductor materials GaAs with InSb.