The Filming Process And Extension Of Amorphous Silicon Films By Molecular Dynamics Simulation

By way of molecular dynamics, we simulated the process of filming amorphoussilicon films on silicon in different conditions(bace temperature，incidence temperature，incidence angle and incidence rate), and analysed these conditions’influences on the formand structure of the films.By means of analysing the films we found that: firstly, we fastened the incidencetemperature，the incidence angle and the incidence rate, then the roughness of the filmstended to decrease with the bace temperature rising, and the bottom of the films becamecrystallized when the bace temperature is close to the incidence temperature or higher thanit,besides, the crystallization seemed to disappear with the decreasing of the bacetemperature; Secondly, we fastened the bace temperature，the incidence angle and theincidence rate, then the roughness of the films tended to decrease when the incidencetemperature rised. And the bottom of the films became crystallized when the incidencetemperature is lower than the bace temperature, besides, the crystallization seemed todisappear with the increasing of the incidence temperature. Thirdly, we fastened the bacetemperature，incidence temperature and the incidence rate, then the roughness of the filmstended to increase with the incidence angle decreasing. And the bottom of the filmsbecame crystallized when the incidence angle droped below a certain level, besides, thecrystallization tended to be more and more obvious with the incidence angle decreasing.Lastly, we fastened the bace temperature，incidence temperature and the incidence angle,the roughness of the films tended to increase with the incidence rate reducing. And thebottom of the films became crystallized when the incidence rate was relatively high, inaddition, the crystallization tended to be unconspicuous when the rate was relatively slow.Besides, we also simulated the tension of our amorphous silicon films, and analysedthe atomic motion and the change of potential energy of the system in the course oftension. The results showed that the potential energy of the system became higher with thetension, and the changing of the film atoms lead to the change of the variation tendency ofthe potential energy. As the tension approaching to a certain extent,the potential energydroped rapidly. At the same time, the arrangement of the bace atoms was changedprodigiously and the film system was destroyed.