The Current Model And Temperature Effects Of Thin-Film Double-Gate MOSFET’s

Thin-film double-gate MOSFET is a new type of high-speed, low-power MOSFET. Compared with ordinary MOSFET, the device has many excellent features, such as high transconductance, excellent subthreshold slope characteristics, higher carrier mobility, short delay time, excellent frequency characteristics, the short channel effect suppression, the smaller parasitics, a strong anti-radiation ability.With the development of modern technology, high temperature microelectronic technology gradually in this field of cutting-edge, mainly to improve the high temperature characteristics of semiconductor devices, operating temperature, in order to meet the demand for high temperature applications. To the early80s of last century, the international community has high temperature MOS device the temperature range studied extended to about300℃. However, still no effect on the temperature of the thin-film double-gate MOSFE analysis therefore imperative to study the temperature effect of the device.This article on thin-film double-gate MOSFET current model. For this model, is considered in sub. The film double-gate MOSFET with ordinary bulk silicon MOSFET, more than one under the gate, more control over the silicon film. The greatest feature of the trans effect of the subthreshold region of the body, the charge carriers from the silicon membrane in vivo transport, play a silicon membrane in vivo characteristics of high carrier mobility. Therefore, in the subthreshold region, according to the QM model, the use of the concept of the inversion layer centroid, bulk silicon MOSFET drain-source current is similar to the current formula. Near the threshold voltage, the Poisson equation on thin-film double-gate MOSFET devices, and silicon film equipotential approximation, the current formula of the attachment of the device threshold voltage. Meanwhile, in medium-potential approximation of the silicon film on the basis of the use of maximum transconductance change (TC) analysis of this model, the threshold voltage and threshold voltage at the silicon membrane surface potential expression. In addition, the specific electrical properties of thin-film double-gate MOSFET simulation. The device’s current-voltage characteristics of electron density, electron velocity, the electric field potential in the sub-threshold voltage and saturation regions were analyzed, and thus a deeper understanding of thin-film double-gate MOSFET device characteristics.And at the same time the temperature characteristics of the thin-film double-gate MOSFET devices, compare the output characteristics at different temperatures, the saturation drain current, threshold voltage and temperature variation. Its first theoretical calculation and analysis, sub-threshold current, threshold voltage, saturation current variation with temperature, and the Medici simulation verification. First calculate the theoretical results obtained by simulation results with theoretical results, the result is the same.