The Study Of Short Channel Effect In HMGFET (Hetero-Material Gate FET)

As the dimensions of MOSFET have continued scaling down, the influence of Short Channel Effect caused by the shrinkage of channel length on MOSFET is increasing. So it is important that suppressing the Short Channel Effect (SCE) and improving the performance of devices.We refer to the relating references and analyze deeply the work principle of MOS. And then, we set up a HMGFET with three different workfunctions, a novel device in this thesis.We set up a HMGFET with three different workfunctions basing on the Mdraw of 2-D simulation software—ISE-TACD. And then we simulate the characters, such as Id-Vd, Threshold Voltage roll, Subthreshold Voltage scope and so on, of the HGMFET established by us.The results show that the new HMGFET established by us can hold a larger on-state current, 100% and 5%, than the conventional MOS and the conventional HMGFET respectively without the cost the leak current. The graph of the relationship between the potential in channel and drain voltage shows that the DIBL is well suppressed in our new HMGFET. We also get the graph of the threshold voltage roll which indicates that the roll of threshold is well suppressed when the length of gate is larger than 150nm.