Pressure Resistance Decay Pressure Sensor Research

In all kinds of micro-sensors, silicon micro pressure sensor is a important part of them, and acquire widespread applications. Therefore it is of great significance to research to improve the performance of the sensor, which mainly includes sensitivity. linearity, and a variety of dynamic response characteristics.The paper designs a piezoresistive pressure micro-sensor, its measuring range is200Kpa. In designing thin-film structure and resistor size, it utilizes two sets of design programmes, namely the typical C-shape structure and new E-shape structure. Firstly, take advantage of theoretical knowledge to calculate the two kinds of structural dime-nsions, the theory involves the piezoresistive effect of silicon, the small deflection theory, Wheatstone bridge, the mechanical analysis of the film and the varistor chara-cteristics. Then do ANSYS static simulation to the two kings of structures, under the condition of meeting the computing requirements, choose a parameter to do ANSYS simulation, it mainly emulates the output voltage and deformation. The larger the output voltage, the higher the sensitivity; The smaller the deformation, the better the linearity. At last.choose the best parameters value of two structures, which is based on the sensitivity, linearity and the degree of difficulty of manufacture craft, ultimately these parameters value constitutes the best C-type and E-type thin-film structure. The static analysis results show the sensitivity, linearity of E-type structure is better than the C-type.Then carry out ANSYS dynamic simulation for the two structures, it mainly refers to modal analysis, the resonant response analysis and transient response analysis. The results of simulation are the resonance frequency, the maximum deformation and maximum stress, the destruction, linearity and stability of the E-shape structure is better than C-shape.The final choice is the E-type structure, then design the masks according to its size, meanwhile design the process flow for processing, the next step is processing the E-shape structure.