Research On The Design And Measurement Of High-Performance Semiconductor Photodetector

The rapid development of the optical communication system has brought many opportunities in photoelectric device areas, but it also brings great challenges. Semiconductorphotodetector, as one of the key devices in optical communication system, is facing great challenges, which include performance demand of high speed. The main research work and achievements are as follows.1. The frequency response performance and electrode solution of high performance photodetector were studied. The model for electrode is calculated. The bandwidth loss is substantially reduced using the im-proved electrode, and the photodetector’s high-speed response is in agreement with the designing goal. For5×5μm2 area devices, the band-width is up to 35GHz.2. The measurement methods of semiconductor photodetector’s high-speed performance are demonstrated and discussed. The photode-tector’s frequency response measurement system has been established and improved successfully, its measuring frequency range is from 10MHz to 40GHz. We have also established an automatic measurement system, which can measure photodetector’s spectral reponse, tuning performance and transmission spectrum.3. Wehave accurately measuredthe semiconductor photodetector’s microwave parameters. The equivalent circuit model was established, and the parameters of the model were extracted accurately.4. We have designed an impedance matching circuit for the semi-conductor photodetector, which was cascaded with a low noise amplifier and then terminated with a load. The parameters of matching circuit are successfully calculated. The simulation results show that, the power transmission efficiency from phtodetecor to load was significantly im-proved, if configured with the matching circuit.