| The first generation of semiconductor materials (Si) and second generation of semiconductor materials (GaAs, InP) because of their narrow band gap, already cann’t adapt to the requirements of the development of semiconductor technology in recent years. ZnO and GaN, as the typical wide forbidden band semiconductor materials, have been in the focus of research directions. While, the low excitons binding energy of GaN which is just22meV restricts its use for light wave devices. Moreover, the condition of its high growth temperature is still a barrier of its large-scale growth. In comparison, since the forbidden band width of ZnO is3.37eV and its excitons bound can reach up to60meV, the ZnO is suitable for the light wave devices. The low cost of ZnO growth is also benefit for its large-scale growth.There are many ways for preparation of ZnO film. The film prepared by one of them—magnetron sputtering have uniform thickness, strong adhesion and controlled growth rate. We have prepared ZnO film with the magnetron sputtering method in a series of different parameters and analyzed its structures, surface morphology and luminescent properties in this paper.The first chapter focuses the crystal structures, properties and applications of ZnO film. It also presents the new progresses and some commonly methods to improve the performance of the ZnO film.The second chapter first introduces the preparation methods of ZnO thin films materials, and analyzes the advantages and disadvantages of various methods. Furthermore, the equipment and principles of the magnetron sputtering method, as well as several film test equipments used such as X-ray diffraction, scanning electron microscopy, atomic force microscopy and fluorescence spectrometer also are discussed in the later.In the third chapter, by using the DC magnetron sputtering method in the different sputtering electricity, a series of Mo films are prepared. Firstly, the internal structure of the films studied by X-ray diffraction confirms that the Mo films are single-crystal. Then, the half width and grain size of the films are calculated by using the gaussian fitting and Scherrer Equation. Secondly, by scanning electron microscopy, I analysis the surface and section morphology of the films, and find film internal is columnar structure. At the same time, we also use atomic force microscope to observe the3d shape and roughness of these films surface, by comparing we find the most suitable buffer layer of Mo films sputter current. Finally, the four-probe approach is used to analysis of the square resistance of the Mo film. We obtain the resistivity of Mo thin films, and then discuss the influence of different sputtering current for the film growth rate and resistivity.In chapter Ⅳ, we first introduce the principle of using radio frequency magnetron sputtering to prepare ZnO thin films in Si substrate. At the same time, I analysis the structure, the film surface morphology and luminous property by Using X-ray diffraction, scanning electron microscope, atomic force microscope.Then, a series of ZnO thin films prepared in the buffer layer Mo. We analysis the effects of the buffer layer on the film structure, surface morphology and luminescent properties, finds the film crystalline quality and luminescent properties have improved after the buffer layer added, but the film surface roughness slightly decrease. At last, I explore the impacts of the different sputtering parameters for ZnO/Mo film properties.In the fifth chapter, by using magnetron sputtering method in different substrate temperature and the different under the sputtering time was a series of ZnO/Mo/Si thin film, and analyses the characterization, analyzes the influences of different sputtering film crystallization of parameters on performance, surface morphology and f the luminous property. I found substrate temperature rising and the growth of sputtering time can further enhance the film crystallization properties and luminous property. |
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