Study On Growth Of Hydrogenated Amorphous Silicon Film By Radio Frequency Magnetron Sputtering System And Its Optical Properties

Hydrogenated amorphous silicon (a-Si: H) film is a kind of important photoelectricfunctional materials. It has been widely used in the high-technology field, such as filmsolar cells， film transistor， flat display and photoelectric detector,etc., due to itsenhanced optical absorption, high temperature coefficient of resistance, getting alarge area of film under the condition of low temperature, easy to doping and norequirement to the type of substrate.This paper focuses on the preparation, structureand optical properties of a-Si: H films.The a-Si: H thin films were deposited on Si and quartz substrate using the RadioFrequency Magnetron Sputtering system. The structure of the films werecharacterized by Fourier Transform Infrared (FTIR) spectroscopy. The dissertationmainly focused on growth of a-Si:H films at different radio frequency power,substrate temperature, air pressure and percentage composition of H2. We found thatwhen the radio frequency power was450W, the substrate temperature was between280oC and360oC and the percentage composition of H2in working gas was20％,canbe obtained the ideal a-Si: H films.We take a series of testing on Raman spectra. As the increasing in substratetemperature, c-Si content dramatically improve。The ultraviolet reflectance spectraand transmittance spectra of a-Si：H film deposited on silica were measured. Theoptical band gap was calculated using the reflectance and transmittance spectra. Wefound the optical band gap of a-Si：H films increased with the increase of radiofrequency power.The optical constants of a-Si：H thin films have been intensively studied byEllipsometry. As the increasing in substrate temperature, the film becomes moreuniform. We also found the refractive index a-Si：H thin films decreases with theincrease of the gas pressure. The optical band gap was calculated using the absorptioncoefficient getting from Ellipsometry. Computation demonstrates that the result isidentical with the reflectance and transmittance spectra analysis.