Microscopic Copper Film Based Cmp The Removal Mechanism Pilot Study

Integrated circuit is the foundation for the development of electronicinformation industry. With the rapid development of electronic science andtechnology, the size of wafer is increasing quickly; meanwhile internalconnection and the density of the interconnection are rising rapidly. Thecross-sectional area of the interconnection is becoming smaller and smaller. Allthis puts forward a higher demand on the technology of planarization. At present,because traditional planarization can only provide local planarization, it can notmeet the market needs. Due to chemical mechanical polishing (CMP)technology can realize global planarization; it has attracted more and moreattentions of scholars all over the world. Chemical mechanical polishingtechnology is a kind of complex technology involving tribology,hydromechanics, physics and chemistry. CMP material removal mechanism isstill not clear, mainly because its microscopic removal mechanism is notexplicitly revealed. So research on microscopic removal mechanism of CMP hasgreat theoretical and practical significance.Under the support of major state basic research development program (973program,No.2009CB724201) and Shanxi province science foundation foryouths(No.2010021023-4),this paper studies microscopic single particle removalmechanism in slurry. Removal model of single particle on chip surface isestablished, and material removal rate of single particle is obtained.1μm copperfilm has been prepared by magnetron sputtering method. Copper film surfacemorphology evolution was analyzed by scanning electron microscopy. Inaddition crystal orientation of the copper film was also studied by XRD.Research showed that the property of the copper film was the best under an airpressure of1.0Pa and a heat treatment temperature of400℃.AFM probe wasused to simulate the scratch test of a single particle in polishing slurry. It wasshown from the experiments that the chip materials removed by single particlewas the oxide film formed under the chemical function of the polishing slurry. The driving force was the adsorption of the single particle. At the same time, therationality of the single particle removal model was verified. Influencing factork was introduced, and the single particle removal model was optimized.