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Based On Silicon Magneto Diode Switch Circuit Design

Posted on:2011-03-20Degree:MasterType:Thesis
Country:ChinaCandidate:Y WangFull Text:PDF
GTID:2218330368494275Subject:Microelectronics and Solid State Electronics
Abstract/Summary:PDF Full Text Request
Magnetic diode seventies which develops in the twentieth century rapidly is a new type of magnetic device, which has high magnetic sensitivity, small size, fast response and so on. It can be used to determine and detect the magnetic field direction and magnetic field strength, and thus it is applied widely in magnetic field measurement and industrial automation and other aspects.This topic based on the works of magnetic diode, design issues such as preparation and characteristics of research and analysis, measures and analyzes the Heilongjiang University 2DCM2 silicon diode characteristics of magnetic parameters, and according to their performance characteristics designs a magnetic switch circuit which can be widely applied in many fields. The results show that, 2DCM2 magnetic silicon samples have ideal diode volt-ampere characteristic curve (a good linear relationship when 15mA ~ 30mA current was turned on) and high magnetic sensitivity. The magnetic switch circuit exerted by positive magnetic field has a obvious change in the linear segment of the pressure drop at the 8V, which fully meets the design requirements.This paper also analyzes and discusses the negative resistance characteristics and temperature compensation methods arising from the sample, in order to further improve the performance of silicon magnetic diode and manufacture accurately quantitative measuring instruments on the basis of it.
Keywords/Search Tags:Silicon magnetic diodes, Negative resistanee charaeter, Switching circuits, Magnetic sensors
PDF Full Text Request
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