Research On Semiconductor Devices Defect Location Technology

With semiconductor integrated circuit technology development, the semiconductor technology key size has narrowed from microns to submicron and even nanoscale, thus a single chip significantly increased levels of integration in order to adapt to the growing multi-function applications. In the chip manufacturing process, improve good product rate and reliability of the chip is the most important step of all chip manufacturers and customers. But due to the advanced technology of semiconductor and multiple functions of chips, the semiconductor failure analysis is facing more and more difficulty.The most important technology in semiconductor failure analysis is defect location technology. The paper introduces defect location technology in detail and mainly analyzes the photoemission and IR-OBIRCH technology. Photoemission technology uses semiconductor devices which are inspired a different wavelength of light in the electric field, then is captured by optical system and produced the corresponding emission site on the image. This technology has great significance for functional failure analysis. IR-OBIRCH (Optical beam Induced current would if) technology detect defects location mainly by the current or voltage change when the laser heating electric current path. The technology is more applicable to leakage failure mode caseThis paper introduces the defects location technology in combination with the engineering practice of various failure mode, use photoemission and IR-OBIRCH as mainly analysis method, base on lots of experiment results, get the defect location technology. In addition, this paper introduce the SDL technology which base on IR-OBIRCH technology and use this technology on actual case successfully.