New Design Of Multiband Passive Devices Of RF Front-end For 4G Application

This paper is mainly focused on the thin-film passive components and system improvements of the 4G wireless system RF front end. The author made the components design of WiMax and LTE frequency brand and got simulation results using Onsemi High-Q technology. The result is quite practical. The components metioned in this paper can be intergrated in the RF module board, and these components can also be used as individual passive flipchip or wirebond components in wireless communication system. Since the Silicon-CMOS technology is very common in OEM Fabs, the cost of the components designed in this paper can be reduced, and the size and RF performance of these Silicon based components are quite good.First of all, an introduction of the popular techonologies using for MMIC design is made to analize the advantages and disadvantages of these techonogies. The Q value of onchip inducotor is the critical problem in Silicon-based components design. In this paper, the components layout design and simulation are based on the Onsemi High-Q Silicon Copper techonolgy to get higher performance and WLCSP packing technogy is also used to realize the Hi-Q onchip inductor design.Secondly, a series of new passive component designs working on 4G wireless system frequency based on the Onsemi High-Q techonolgy are proposed in this paper. These new designs are based on LC components of intergrated parameters to get the smaller size, and the simulation and tuning work have been done on the schematics level and layout level. Some component simulation results are compared with the actual tapeout measurement results in this paper, and they match quite well, which certify the validity of the simulation parameters settings. The new component designs are better than the normal LTCC components in size and performance.