In order to raise the popularization of silicon solar cells, the producing cost must be reduced and the stabilized conversion efficiency must be improved. Improving the stability of silicon thin film solar cell is as important as improving the initial performance. In this paper, silicon thin film solar cells were investigated.Two kinds of silicon thin film solar cells were prepared to investigate the degradation. One is low temperature single junction based amorphous silicon thin film solar cells were prepared under different silane concentration and power. The other one is P-type single junction based microcrystalline silicon thin film solar cells with different TCO and substrate temperature. The measurements of the I-V,Raman and SIMS were conducted before, during and after light-soaking. The main reason of the degradation of materials was discussed.Tandem silicon thin film solar cells with different I layer and electrode were used to perform light soaking experiments under different light sources. The J-V parameter,quantum efficiency (QE)and Raman spectroscopy were measured during the light soaking. The degradation of microcrystalline silicon solar cells was studied and finding the optimal parameter.Some preliminary studies on the single-chamber system and tandem module solar cells were investigated. Optimizing the time of hydrogen plasma treatment which is used reduce the boron and phosphorus contamination. And the effect of silane concentration on stability of solar cells modules was researched. |