| In the RF communication system, RF power amplifiers play very important roles, which are the pivotal RF communication system components. With the development of semiconductor transistors, the power amplifier is towards broadband and high power output direction.In this thesis the developed amplifier belong to ultra-wideband and higher power and more linear amplifier. Between 400MHz and 650MHz, the amplifier has super linearity, super harmonic suppression, super inter-modulation suppression, higher power gain and higher output power. The design of the RF power amplifier includes bias circuit's design and RF matching circuit's design. The purpose of the bias circuit intends to provide stable power amplifier voltage and current; and in the RF circuit's design, the power amplifier driver was designed for the maximum, and the output stage was designed with the Load-Pull method. In this thesis the transmission line transformer was used in the matching process, which meets the targets and simplify the matching network circuit. General design idea is: analysis of transistor impedance, then choosing good matching components, and then through the ADS simulation software doing simulation, and then debugging and testing.The content of the article is briefly arranged as follows:The first chapter is introduction, which mainly introduce the RF power amplifier's significance of research and development trends and illustrate the main work..The second chapter expounds the basic theory, classification and linearity's technology of the RF power amplifiers.The third chapter is the design of the power amplifier.The forth chapter is the debugging and testing of the power amplifier.The fifth chapter is the conclusion of the whole paper. |
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