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The Electrical Properties Of Organic Semiconductor Material And The Carrier Concentration Calculations And Analysis

Posted on:2010-05-01Degree:MasterType:Thesis
Country:ChinaCandidate:Z ChangFull Text:PDF
GTID:2208360275983906Subject:Condensed matter physics
Abstract/Summary:PDF Full Text Request
After the first organic semiconductor luminescence device appeared, organic semiconductor attracts more and more focuses of people, and now ones make organic light emitting diode (OLED) and field effect transistor (FET) successfully based on organic conjugated semiconducting polymer. Organic semiconductor devices are on the verge of widespread commercialization in various industries, such as car stereos, flat panel displays, cell phones, illumination and other appliances. During the research, improving photoelectric properties of device is always our destination, and key factor impacting properties of device is charge-carrier transport properties in organic semiconducting polymer. Although ones have done a mass of researches about photoelectron effect and charge-carrier transport properties theoretically and experimentally, and got some research productions, there is no unified theoretical model to can explain electric experiment data great in different organic semiconducting polymer materials up to now. Therefore, we need to further research in the filed of theoretical simulation of organic semiconductor materials.The charge-carrier mobilityμis the most important factor in the charge transport properties of organic semiconducting polymer because it means performance of electric conduction of material, and means the J-V characteristics of organic semiconductor device finally. We can consider charge-carrier transport as hopping from a molecule to another molecule, and call hopping process. According to this process, people propose different kinds of model from Mott-Gurney model early to complicated model including many impact factors now, we all seek a better theoretical model to explain this transport process. Pasveer et al. proposed a new model including temperature T, charge-carrier density p and electric field E based on Gaussian Disorder Model (GDM) to interpret charge-carrier transport process in OLED and FET. By now, this model can explain J-V characteristics of organic semiconductor material and device excellently.However, we notice that there is no literature which researches or discusses numerical simulation and numerical calculation method of mobility model and J-V model. So, this paper researches and discusses how to calculate a series of theoretical models in organic semiconductor by means of the model of Pasveer. In this paper, we adopt uneven discretization method and Newton iteration method to solve the non-linear integro-differential equations set in model according to physical process of organic semiconductor. Then we adopt energy minimal value principle to make whole system energy of charge-carrier transport in organic polymer to function as a result of unknown p 0, and estimate a precise scope for p 0 by means of relation between stabilization of system and value of system. The calculated J-V characteristics based on the estimated p 0 are in accordance with experimental data in interrelated literature. It demonstrates that our numerical calculation is precise, and also shows that energy minimal value principle can be applied in the research of organic semiconductor, and while offers us a useful tool for theoretical simulation. In the end, we calculate the primary electric properties of NRS-PPV and OC1C10-PPV, and analyze the charge-carrier transport process. The calculated results can instruct experiment in a certain extent.
Keywords/Search Tags:Space charge limited current, Non-linear integro-differential equations set, Energy minimal value principle, Uneven discretization, Charge-carrier density
PDF Full Text Request
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