Sol - The Gel Prepared Zn <sub> 1-x </ Sub> Mg <sub> X </ Sub> O The Mn <sub> X The Zn <sub> 1-x </ Sub> </ Sub> O Study Of Film And Its Luminescent Properties

Zinc oxide(ZnO) semiconductor,with a large exciton binding energy of 60meV and a direct-band gap of 3.37eV attracted tremendous attention in recent years because of its high potential for applications,such as short wavelength optical devices,photonic devices and laser systems etc.Especially,the optical property of ZnO could be obviously influenced by impurity doping,so several techniques have been employed to synthesize high quality ZnO and doped-ZnO thin films.In this work,based on the fact that metal-doped technological conditions had great influence on the crystal structure and ultraviolet(UV) emission of ZnO,such as Mg-doped and Mn-doped ZnO thin films,so we applied the theory of orthogonal-design to study the epitaxial conducting Zn_1-xMg_xO and Zn_1-xMn_xO thin films grown by sol-gel process on Si(110) substrates,and the film crystal structures,surface morphology and radiation qualities influenced by different doping technological conditions were studied by X-ray diffractometry(XRD),atomic force microscope(AFM) and photoluminescence(PL) spectroscopy.The analysis of the test result indicated that compared with ZnO,Zn_1-xMg_xO and Zn_1-xMn_xO thin films had better c-axis-orientation,and a strong blue-shift UV emission peak at 370 nm appeared both in Zn_1-xMg_xO and Zn_1-xMn_xO.In particular,the visible emission of ZnO appeared between 430 and 490nm in the PL Spectra was passivated in Zn_1-xMn_xO films at room temperature,which leaded to that the UV emission qualities of Zn_1-xMn_xO thin films were greater as 58.543 times as the visible emissions in the optimal conditions.At the same time,the causes of blue-shift in Zn_1-xMg_xO and Zn_1-xMn_xO were explained reasonably based on the solid solution effect and Burstein-Moss(BM) effect,and the visible emissions passivation caused by the reduction of the existence of surface defects and oxygen vacancies(V_o″) defects were interdicted by the Mn oxide in Zn_1-xMn_xO films.