Metal Silicide In Deep Sub-micron Vlsi Applications

With the rapid development of ULSI for higher integration, smaller feature size. The rapid progress of microelectronics brings out the application of silicide technology as well as the challenge for metal process, Silicides have been well received as a choice material for microelectronic device applications base on their low resistivities and thermal stability. But it also brings out some problem ,such as leakage of schottky, or increased ohm resistance.Compare the BiCMOS process in company S, TiSi2 is used for both schottky diode and ohm contact. In this paper, PtSi is used for schottky diode and TiSi2 is used for ohm contact in the same wafer.Of the group of silicides, the two that have been the focus of most development for the silicide process are PtSi and TiSi2. In this paper we study the two silicides, one is PtSi. Schottky barrier are used in a variety of device and circuit applications. One of the most important utilizes the Schottky-barrier diode is to increase the switching speed of bipolar transistors. PtSi, which is the material most commonly used for fabricating Schottky-barrier diodes to lightly doped n-Si, this is due to the overall reliability with which PtSi-Si contacts can be fabricated, compared to the other candidate structures; The second silicide is TiSi2, this is attractive for the silicide application because it exhibits low resistivity.Physical Vapor Deposition is used to form the silicides, some actual problem in application had been researched and solved that it is successful to apply in manufacturing. DOE method is applied to optimize the process parameter and maintain the quality. Lower leakage and low contact resistance are needed for mass production in company A.