The Plzt Thin Film Electrical And Optical Properties And Electro-optical Device Principle

Using optical phased array(OPA) to realize the Optical scan had a splendid future. Optical phase shifter was one important element of Optical phased array. It is an important means to produce optical phase shifter with PLZT thin film which had high performances, such as strong electro-optical effect, fast response speed, good heat stabilization and strong laser endurance. This paper compared the crystal structure, the electric performance and the optical performance for the PLZT thin film under different Ar:O2, different annealing temperature and different holding time. And the principle and the possibility of the OPA using PLZT thin film are discussed.PLZT thin film process parameters was optimized. Annealing at 650oC for 20min, the PLZT thin film which was prepared on Pt/Ti/SiO2/Si substrate showed better dielectric performance and ferroelectricity. Drain current density of the PLZT thin film was 0.86×10-7 A/cm2 under the electric field of 200 kV/cm.The transmittance of the PLZT thin film prepared on ITO/ quartz substrate was about 80%. And the extinction coefficient k was smaller than 0.015 in the visible light wavelength range. Refractive index n changed from 2.1 to 2.6. When wavelength was 632.8nm, the refractive index was 2.2. The energy gap was 3.78eV.Through the analyze of the one dimension OPA theory based PLZT electro-optic thin film, optimized device structure to increase the optical intensity ratio of the mian lobe and the side lobe and the relations of the cell number N, the side-lobe suppression, deflection angle were gained. Using finite-element method to simulate electrical field distributing, the structure parameter was obtained. Transmittance function was analyzed to get the correct optical intensity distributing function.