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Dpl Microchip Mathematical Simulation And Experimental Study Of Passively Q-switched Laser

Posted on:2006-09-18Degree:MasterType:Thesis
Country:ChinaCandidate:G ShiFull Text:PDF
GTID:2208360152997478Subject:Optical Engineering
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Recently, Cr4+ and Nd3+ co-doped self-Q-switched crystals are very attractive.Particularly,Cr4+-doped crystals as passive Q-switch(saturable absorber ) have gotextensive attention, which have the advantages of wild absorption band, goodsaturable absorption, long restored time, good photo-chemical stability, no fading,good thermal conductivity and high damage threshold.This article introduce the emulation analysis and experimental research on DPLCr4+: Nd3+:YAG co-doped passive-Q-switched microchip laser with high repetitionand peak power.Firstly, based on the academic analysis, we describe some improvements of thegeneral passive-Q-switched rate-equations. The emulation results of the improvedrate-equations were much more close to the experiment results. Then in the improvedrate-equations, we did the numerical optimization on the LD pumpedpassive-Q-switched microchip laser. At the same time we calculate the peak power,the output pulse energy, the pulse width, etc. Five important parameters are optimallyanalyzed in theory, which determines the quality of the microchip lasers and the seriesof practical results to the project.We did experiment on the passive-Q-switched microchip laser which is preparedwith the liquid phase epitaxy (LPE) method. Under the constant pump condition, weget the initial experimental result with the pulse width from 1.66ns to1.99ns and therepetition rate from 7 to 40KHz. This experiment has not been reported in internalmagazine yet.
Keywords/Search Tags:Cr4+:Nd3+:YAG, liquidphase epitaxy, microchip, passive-Q-switched
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