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Ld-pumped Microchip Laser Passively Q Material

Posted on:2003-10-15Degree:MasterType:Thesis
Country:ChinaCandidate:H R GongFull Text:PDF
GTID:2208360065951003Subject:Physical Electronics
Abstract/Summary:PDF Full Text Request
LD pumped Q-switched microchip laser is a full solid state lasers, which could realize the output laser on the level of the extremely short pulse width, high peak power, and high repetition rate. This news class lasers can be used in many applications as a pulsed light source. The aim of this paper is design a new cavity structure: the saturable absorber Cr4+:YAG thin film was grown on Nd:YAG by LPE(liquid phase expitaxy). The performance of optical and thermodynamic of laser would greatly improved when this cavity structure was used.The absorption spectrum of Cr4+:YAG was researched in detail. The energy level structure and crystal field parameter of Cr4+:YAG was obtained based on ligand field theory and the absorption spectra at low temperature. The analysis of optimization was made and the assignment of peak in argument was discussed.The Cr4+:YAG thin film with the characteristic of saturable absorption was grown by LPE on YAG and Nd:YAG. With the control of the Cr4+ ion concentration and thickness of epi-layer, the difference between saturated and unsaturated absorption at A.=1064nm can be adjusted effectively, which can perfectly meet the requirement of the diode-pumped passively Q-switched microchip laser on the saturable absorber. There is a peak at 750nm in the absorption spectrum of Cr4+:YAG thin film. We assign this peak to the absorption of Cr5+ in the crystal and the explaining was made in detail.The optimization was made to the Cr4+:YAG, the pumped laser absorption and the matching between underlay and Cr4+:YAG thin film was settled. The mechanism and reason of lacuna in Cr4+:YAG thin film was commentated.
Keywords/Search Tags:Q-switched, Cr,Ca:YAG, Ligand field theory, Liquid phase epitaxy
PDF Full Text Request
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