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.gainp / Gaas Hbt Oscillator Phase Noise Characteristics Of Study

Posted on:2004-10-19Degree:MasterType:Thesis
Country:ChinaCandidate:Y F CheFull Text:PDF
GTID:2208360125965649Subject:Microelectronics and Solid State Electronics
Abstract/Summary:PDF Full Text Request
This paper investigates the major factor that affect phase noise in oscillator.and present some approach to improve phase noise in oscillator.The research and main results are as the follows:1. Based on phase noise model of oscillator,two main factors that affect phase noise are concluded:noise performance of active device and quality factor of resonator.2. A GalnP/GaAs Heterojunction bipolar transitor has been fabricated, the key technology are investigated.DC and AC measures are performanced.3. An accurate and broad-band method for heterojuction bipolar transistors small-signal model parameters is presents in this paper. This method differs from previous ones by extracting the equivalent-circuit parameters without using special test structure or global numerical optimization techniques. The minimum noise figure was calculated by using Z parameters analysis, the influence of the equivalent circuit elements on the minimum noise figure was simulated by using HP ADS software.the availably method was proposed to improve device high frequency noise performance by changing device's geometry and physics parameters.4. The push-push oscillator approach are investigated.a 17.5GHz oscillator has been designed.
Keywords/Search Tags:GaInP/GaAs HBT, push-push oscillator, small-signal quivalent circuit model
PDF Full Text Request
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