| In this dissertation, the working priniciple of nanoscale-thin-film-type pressure is studied, and a sort of high-prrecision pressure sensor chip is designed. The characterization method, for high-precision nanometer-thin-film-type pressure sensor, is brought forward. The switching circuits of this sensor are analysed and compared.NiCr nanoscale thin film is successfully prepared on 17-4PH stainless steel elastic substrate which is specificly pretreated through ion-beam sputtering technology. SiO2 insulation film of high insulativity is successfully manufactured, and insulation resistance, measured by insulation instrument, is more than 10000M at 100VC. The effects of the parameters,such as sputtering rate,working gas pressure and substrate temperature and so on, on film-forming mechanism,thin film performance.thin film structure and growing rate are thoroughfully analyzed, and the conditions of thin film growth are searched out through incorporation of theory and experiment. The effects of heat-treatment processes on the stability of nanoscale-thin-film-type pressure sensor are analyzed, and a novel heat-treatment process with NiCr nanoscale-thin-film-type pressure sensor chip is put forward. The nanoscale-thin-film-type pressure sensor chip of high performance is developed. Its highest service temperature is higher 100℃ than ones of diffusion-sillicon-type pressure sensor and capative-type pressure sensor, and its stability is remarkably improved compared with one of past-type pressure sensor. The structure and surface topography of NiCr nanoscale thin film are analyzed with SEM, and the thickness of NiCr nanoscale thin film is accurately measured. The experimental result manifests that the surface topography of NiCr nanoscale thin film is homogeneous and continuous, that its thickness is 84.4 nm. Novel process which nanoscale-thin-film-resistance-type pressure sensor is manufactured by is ultimately optimized through experimental and theoretical analysis.What effects the sensitivity temperature drift characteristic of nanoscale-thin-film-type pressure sensor is analyzed. The sensivity temperature driftcomputer compensating software is designed with C++ language. The instability for hardware compensation technology is voided. The software.handling characteristics of sensor and processing parameters, is designed with Java language and database technology. The ability of managing data and analyzing data is greatly improved for it. It is of tremendous aid for developing sensors and studying sensors.The nanoscale-thin-film-resistance-type pressure sensor is successfully developed at the foundation of aforementioned work. Comprehsensive test indicates volume of the new-style pressure sensor is small, its precision is generally 0.1 level, its power consumption is very low, and nanoscale-thin-film-resistance-type pressure sensor can stably and reliably work at harsh environment, such as high temperature and high pressure and so on, and zero drift is less than 0.1 %F S for half year at lower than 200 . |
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