| We have designed a novel InGaAs/InP DHET and studied the influence of material parameters of DHBT on the current, I-V output characteristics, current gain, and offset voltage by using the DHBT current model. The research contents and main results are as the follows:1.The novel InGaAs/InP DHBT structure presented here is characterized by a 8 doping emitter and a N+ doping composite collector. The DHBT has many advantages including the low offset voltage, high breakdown voltage, good I-V output characteristics, and high cutoff frequency.2. The DHBT current model has been developed and used to analyze the influence of the parameters such as 8 doping concentration and base width on the current, I-V output characteristics, current gain, and offset voltage.3. It's indicated that the offset voltage decreases with increasing the 8 doping concentration. In order to reduce the potential peak of the conduction band of the emitter effectively, the 5 doping concentration should be larger than Ixl012cm~2. The collector current, recombination current, and current gain increase with increasing the 8 doping concentration. The saturation range of the current gain is wider for the larger 8 doping concentration.4. Current gain decreases with increasing the base doping concentration and the base width. The influence of the base width on the current gain is much bigger than that of the base concentration. The I-\ characteristics is improved when increasing the thickness of N+ layer and the doping concentration of N+ layer. However, the doping concentration of n" la} er has a little influence on the I-V characteristics. |
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