V-band Low Noise Amplifier Is Developed

This thesis presents the study of a V-band Low Noise Amplifier (LNA) witch is used in the project named "Millimeter wave ISL technology". Basing on internal technology level, the HMIC amplifier was composed of HEMT devices and microstrip.Because the parasitical phenomenon is serious in millimeter-wave band, the wide-band topology with good process coincidence was adopted to suppress the deterioration of performance caused by size error. And the stability was considered carefully. Several methods were taken to avoid the self-excitation which is frequent in millimeter-wave band. The technique of equal power indication was adopted to measure this amplifier accurately.Ansoft was used to design, optimize and simulate the circuits. The amplifier was developed with the Noise figure of 4.5dBmax and the gain of 30dBmin over the 59.4~60.6GHz range. Its other major features include the ripple in band. 1.0dB, the VSWR. 2 and the ports of standard waveguide WR-15.