Fractal growth is a challenging field in fractal physics. Analyzing theories, establishing growth models and simulating by computer then processing the simulated results is the most important means to investigate the physical origin of fractal growth at present. In this paper, two kinds of growth which are most widely researched in fractal growth are cared: one is Diffusion-Limited Aggregation(DLA), the other is the Growth of Thin Films. Based on the classic theoretical models of this two growths , six improved models, built for more practical use, are presented: Diffusion and Reaction-Limited Fractal Aggregation with Finite Steps; DLA with Anisotropy Probability of Reaction; DLA with Anisotropy Probability of Diffusion; Fractal Growth of Rotating DLA-Clutsters; Fractal Growth of Ultra-Thin Films via Eletro-deposition and Fractal Growth of Thin Films at Low Temperature. There are several growth conditions in each model, and with computer simulating, the fractal growth morphologies under all kinds of growth conditions are presented. The fractal graphics of simulation are dealt with: the fractal dimensions of fractal growth in different conditions are calculated by different way.The advantageous results are also obtained in contrast with the fractal dimensions. |