Surface Passivation Of Hgcdte Photovoltaic Devices And MIS Device Preparation And Analysis

Basing on analyses of the surface passivation of the HgCdTe PV detector in literatures. The Key technology of Metal-Insulate-Semiconductor(MIS) device preparation is investigated. We performed some measurement and analysis of MIS device, and several problem on the preparation of technology ware solved. The MISFET device was prepared. The input and output character of the device are obtained. The type of device is fixed, and the general parameters are calculated. The important results are as following:Firstly, the MIS device using both bulk and film HgCdTe materials. The Vre of the device is above 2V, and the interface charge density is between 1010~ 1011 per cm2.Secondly, the reason of the p-HgCdTe variation during making MIS device is analyzed, this variation is very likely to be caused by the large interface charge density in the ZnS film.Thirdly, it is proved the uniformity, the time stability of the made MIS device are relatively good.Fourthly, the MISFET were successfully fabricated, and good input and output performance were obtained. By simulating and analysising transfer characteristic curve, it is concluded the type of the device is N channal enhanced MISFET.Fifthly, the g. of the MISFET device was calculated to be g=6. SlTxlO^S and g.=l. 184xlO~5S for Vds=0. 02V and Vds=0. 12V respectively.Sixthly, the g^ was calculated to be gds=6. SlTxlO^S for Vds=0. 02V and Vgs=7VLastly, the amplification factor \i had been calculated, the result from the calculation and measurement of the output is in agreement, and to be H=5. 467x10-3...