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Self-assembly Of The Preliminary Study Of The Growth Of Gan / Aln Quantum Dot Structures

Posted on:2003-11-22Degree:MasterType:Thesis
Country:ChinaCandidate:J W ChangFull Text:PDF
GTID:2208360065455683Subject:Microelectronics and Solid State Electronics
Abstract/Summary:PDF Full Text Request
The growth of quantum dots structures and the study of characteristic have important academic significance and practical profit. Furthermore, the growth and the study of self-organized quantum dots structures become more and more important recently , and the application of self-organization technique become wider and widerIn this thesis, we address the theory of film growth and the growth technique firstly More, the ways and characteristics of surface detection are prescribed We mainly report the growth process , results and discuss of self-organized quantum dots structures in the A12O3 substrates by S-K mode using ECR-MOCVD, in the ESPD-U device The growth art of AIN epilayer which is the preliminary foundation of self-organized GaN/AIN quantum dots structures, including the substrate cleaning, nitridation , the growth of buffer and the growth of GaN and AIN epilayer, is discussed We deliberately compare the test result of RHEED XRD and AFM and achieved the optimalized condition of AIN At last we have successfully realized the growth of AIN which is much smooth and better crystal quality Moreover, we grow the self-organized GaN/AIN quantum dots structure in S-K modeBecause the limits of the heater temperature, we can not grow the atom-smooth epilayer of AIN until now So we could not grow better quantum dots which have small diameter and big density But the self-organized quantum dots structures with better quality will be realized successfully if the substrate temperature is increasedThe thesis study belong to my tutor subject of National Nature Science Foundation (69976008)...
Keywords/Search Tags:Self-organized quantum dots, ECR, PA-MOCVD, Rheed
PDF Full Text Request
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