| Demand of people for semiconductor devices is higher and higher. In order to analyze the characteristics of semiconductor devices better and manufacture the semiconductor devices to meet the requirements, the research on the numerical simulation algorithm of semiconductor devices is crucial.PIN diode is a kind of simple semiconductor devices without loss of generality. In this paper, the numerical simulation of PIN diode will be taken by using the basic theory of the spectral element method (SEM). The stationary and transient characteristics of PIN diode are obtained. And then, the numerical simulation algorithm is optimized.This paper firstly introduces the research meaning of this subject and the current research situation at home and abroad. Then the basic theory of the PIN diode is introduced, including the basic working principle of PIN diode and its physical equations as well as the boundary conditions. Secondly, this paper introduces in detail the process of employing spectral element method to carry out the numerical simulation of PIN diode. The process includes the derivation of the formulae, the way to realize it with computer languages and the verification of the correctness of the algorithm. Among them, the numerical simulation of PIN diode mainly comprises stationary decoupled simulation, stationary coupled simulation and transient coupled simulation. Stationary simulation can obtain the volt-ampere characteristics of PIN diode. Transient simulation can get the forward and reverse current overshoot of the PIN diode. Finally, the above algorithm is optimized with the basic characteristics of spectral element method to speed up the execution of the programs.In this paper, the numerical simulation algorithm of PIN diode builds a platform for the numerical simulation of semiconductor devices. It is the base of the simulation of other semiconductor devices, even the semiconductor integrated circuits. |
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