Development Of Plasma Enhanced ALD Control System Based On LabVIEW

Atomic Layer Deposition, is widely applied inmicro-electronics and nano-materials for itshighly controllable deposition parameters, excellent deposition uniformity and consistency. ALD can make film growth processes in the grooves with high aspect ratio and complex surface materials. The films have homogeneity of100%, preserving, defect-free and other excellent properties. Plasma Enhanced Atomic Layer Deposition (PEALD) is based on traditional ALD equipment and increase a RF function, it can make the less active precursor sources of ionization ion. It can get a faster growth rate and improve deposition efficiency. The films growth by PEALD showing higher density and higher Breakdown voltage than traditional ALD.For PEALD thin-film process requirements, this thesis completed the design of vacuum system, plasma systems and control procedures. This paper includes two parts of working that selection of electrical components and system software design.Electrical component selection include data acquisition card, mass flowmeter(MFC), vacuum meter, RF power and solid-state relay(SSR) types to choose from. The system software design includes recipe edit and execution, RF power device of digital communication, temperature control, data storage and query, and alarm information.In this paper, the design of systems using NI cDAQ series capture card to complete the device analog/digital signal acquisition and control. Writing device control through LabVIEW program, the completion of plasma enhanced atomic layer deposition process optimization system design, implementation process fully automated, thus reducing the risk of misuse of traditional single-step operation, greatly improving the efficiency of PEALD film preparation, and the system is stable, post-maintenance easy upgrade for the further development of atomic layer deposition technique to make a contribution.The practice have proved that this system running stability, and the temperature control accuracy could be as little as0.2℃, and the evenness of deposition film uniformity could higher than99%. It has achieved the design requirements.