Soi Preparation Of Oxygen Ion Implantation Defects In Control And Research

Compared to bulk silicon, SOI(Silicon On Insulator) technology supplies better performance by increasing processing speed, reducing the amount of power, improving reliability and permitting smaller packaging size. The inherent operating advantages of SOI based IC s apply to a wide range of products across a broad base of industries such as a full range of competers, servers and workstations, networks, portable battery powered products, harsh environment systems and other applications where o-equipment must perform reliably.SOI achieves a two-year performance gain over conventional bulk silicon technology, causes a jump in the performance roadmap and compensates for some of the expected loss of bulk technology performance improvement on the chart of Moore's Law. It is becoming as a mainstream chip-making technique and the new silicon-based integrated circuits technology in 21century.As the best method of manufacturing SOI wafer---SIMOX technology have been applied widely at present, and the rule key tool is oxygen implanter which have the ability about high energy, high dose, big beam current.The crystal defect after implantation become the maximal yield loss when SIMOX technology adopt with oxygen implantation. So the article give emphasis to study the production theory of implanted crystal defect, and how to control the defects with the different condition with energy, dose, beam current and temperature. And found the result that more pinhole defect at lower dose (within critical dose), a little more pinhole defect at higher energy and more pinhole at lower temperature of wafer when implanting, provide some improvement action of implanter setting and process control according split experiment.The reasonable implantation condition have been applied to the big scale production, and get a bigger improvement than before at yield.