A New Process Of The Impurity Distribution Fitting And Model Parameter Extraction

At present, the Smart Powe IC (SPIC) has been widely applied in many fields. It has been greatly promoting the further development of electronic industry and is called"the second electronic technology revolution".In the subject that this thesis referes, a novel SPIC has been designed. This design is based on the related patents of Prof. Xingbi Chen, so we can use only one normal CMOS fabrication process to intergrate both high voltage devices and low voltage controlling circuits in one chip. Consequently, there is no need to use high-cost isolation technology such as junction isolation and dielectric isolation. Certainly, the production cost will be reduced.In this thesis, the developments of current power electronics, semiconductor fabrication and device model are reviewed firstly. The detailed physical model and parameters of BSIM3v3 model are introduced as well. Next, the doping distribution is then determined and described in a file that can be read by device simulation tools. Thereupon, the BSIM3v3 MOS model is chosen based on the need of the later IC design. And an optimized procedure is applied during the extraction of BSIM3v3 parameters. Finally, the layouts of testing devices are designed for the purpose of an accurate data acquisition.