Silicon Spiral Inductors And Gaas Hemt Modeling

As the rapid development of wireless mobile communications market, the transceiver has higher demands, such as: low-power, low-cost, high-performance. It makes radio-frequency integrated circuit design as the hot topic in the research field. This paper focuses on the modeling of the passive silicon-chip spiral inductors and active GaAs HEMT, and obtains some new results and new modeling method. The main research contents and results are summarized as follows:Based on double-pi topology, a new on-chip spiral inductor model has been developed. The new RLC model uses a transformer loop to model the magnetic substrate loss due to eddy current in silicon substrate. Good accuracy of the new model is demonstrated through comparing the model and the measure data.Based on the Angelov and electrothermal large-signal model, this paper proposed two modified models using parameter fitting. The improved models keep the original model formulation and modify the new parameter functions. Simulated and experimental results show good agreement. Moreover, the measured data pre-processing including the finite difference and data smoothing before modeling has been discussed.Finally, the neural network modeling is presented. As a fast and accurate modeling tool, neural network has been applied to electromagnetic engineering computer-aided design.