Semiconductor Film And Performance Studies, Prepared By Pulsed Laser Deposition Method

Two parts were included in this work. One was that PbSe thin films as a narrow band-gap semiconductor were prepared on the different substrates used pulsed laser deposition(PLD);Technologic parameters influencing to structure and surface morphology of the films were investigated in details;Optical and electrical properties of the films were tested.The other was that ZnO and Mn doped ZnO films as a wide band-gap semiconductor were prepared with PLD;Structural, morphology, Optical properties of the films were investigated.EDS,XRD,AFM were used to characterize the component,crystallization behavior, orientation and surface morphology of the thin films. The results showed that the constitutes of thin films by PLD consisted with the targets ,and realizing thin films deposited with same constitutes;All of the films were heteromorphism;It was revealed that the effect of the growth temperature was significant to the diffract peaks of the films and that of the substrate was negligible;the films had rather flatness surface and compact structure;the peak-to-tail roughness of PbSe thin films surfaces was less than 200nm and that of ZnO and Mn doped ZnO films surfaces was less than 100nm;Flat degree was improved with falling of growth temperature and laser energy .Optical and electrical properties of the PbSe thin films were studied for the first time.The test result had demonstrated that they had sensitivity to light of a specified wavelength and obvious absorption edge at 5 μ m corresponding to band-gap width of PbSe thin films;Light of wavelength less than 5 μ m was strongly absorbed;In addition, PbSe/Si I-V curve showed its character was good.Optical properties of the ZnO and Mn doped ZnO thin films data indicated that ZnO thin films had obvious absorption edge at 387nm corresponding to their band-gap width 3.2eV, and that they had strongly absorption ability in the UV region of thespectrum and highly transmittance ability in visable region of the spectrum. For the first time ion implantation using Mn had successfully realized the ZnO thin film energy gap adjustment. Along with the Mn ion implantation quantity x increase, the band-gap of thin films increased. When the Mn content increased from 6% to 12%, the absorbency in strong UV absorption increased too.