Aluminum Surface Micro-arc Oxidation Process Conditions

Research actuality, application foreground and field of Microarc Oxidation (MAO) technology are reviewed on the base of studying lots of literature at home and abroad. Moreover, the basic knowledge of MAO is generalized. The experiment research is an important part. It is studied what current density, oxidation time, electrolyte solution component and different base material influence formation of ceramic coating on the surface of Aluminum alloy by MAO in this part. The condition of forming excellent ceramic coating is found through a lot of experiment. The mechanism of forming ceramic coating on Aluminum alloy is discussed. Shape, structure, rigidity and thickness et al of forming ceramic coating in different conditions is tested and analyzed. Main factors of influence on ceramic coating performance (thickness, rigidity, adhesion intensity, resisting attrition and resisting erode) is researched. Experiment research and theoretical analysis show that current density 4O拁-6OAIdm2, oxidation time 60?0 minutes and certain output voltage are good conditions of occurring MAO. Current density and output voltage are two key factors of MAO. Length of oxidation time is fundamentality factor of MAO in certain range of time. Electrolyte solution component and different base material have some influence, but it is not very important. Ceramic coating of MAO is mostly made up x桝l203 and y桝l203. It has some excellent performance .For example, low hole ratio, high break down voltage, high rigidity, good resisting attrition and resisting erode et al. Merit of second era engineering material (Aluminum alloy material) and third era engineering material (ceramic material) is combined by MAO technology because of ceramic coating formed on Aluminum alloy surface .In word, MAO technology can meet lots of require of high technology. It has extensively application foreground in many fields. For example, war industry, aviation, spaceflight, machine, weave, automobile, medical treatment, electron and ornament field et al.