| With the advent of electronic information age, compared with the traditional electronic technology, microelectronic technology based on integrated circuit to achieve miniaturization of device and circuit and has become the cornerstone of today’s information industry. However, with the progress of the study, the researchers found that due to the limitation of theory in classical physics, relying on traditional microelectronics technology to reduce the size of electronic devices is more and more difficult,but Moore’s law makes scientific workers seek new techniques and materials in the contradiction between the development process of electronic devices and technology, and one dimensional semiconductor materials have attracted wide attention because of its remarkable properties. Nanowire, because of reaching nanometer size in two dimensions and in optics, optoelectronics fields having great application potential, becomes one-dimensional semiconductor materials which has been widely studied.The study of preparation technology of silicon nanowires is the basis of research on silicon nanowires performance. This paper uses a metal catalytic chemical etching method to prepare silicon nanowires. The preparation process of this method is simpl e and low cost. And in the process of experiment I change the corrosive liquid concen tration of corrosion and corrosion time, corrosion temperature and the second etching time to compare these factors on the surface topography of silicon nanowires in the pr eparation. In the experiment I found that in the process of etching etching time of CL SM has had a huge impact, if etching time is short, the sample cannot generate silicon nanowires, while a long etching time will cause silicon erode up, finally dissolved in the etching liquid. This paper tries to use other experimental methods to prepare silico n nanowires. For example, prior to a second etching using annealing treatment to imp rove the morphology of silicon nanowires and luminescence properties. In subordinat e experiments grid sample generated, with etching time extends, the grid structure gra dually disappears, but the specific line mechanism and the reason of disappearing is y et to be studied.In the study I found that growth direction of silicon nanowires prepared in the ex periment is only affected by the surface layer of silver, and the special morphology of silicon nanowires on both ends and silver in the middle layer forms. |
