| In this paper, theβ-FeSi2 thin films were fabricated by magnetron sputtering (MS), and the technology about magnetron sputtering is studied in detail. The growth mechanism ofβ-FeSi2 thin films is analyzed.The samples by MS were characterized by XRD and SEM, and the anneal temperature is 600℃or 700℃. The samples surface is composed of consecutive Fe film. But the Fe will transform toβ-FeSi2 when the temperature from 600℃and the wafer will shrink and. become island sharp when the temperature over 800℃. When the temperature over 900℃,theβphase wafer will transform toαphase wafer. And the wafer will all become wafer ofα-FeSi2 when the temperature arrive 1000℃.Theβ-FeSi2 film which created by magnetron sputtering is single-phase, relative to theβ-FeSi2 film which created by IBS preparation. But the film of MS preparation is more thicker than the file of IBS preparation. |
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