Oxide Thin Film Stress Of X-ray Diffraction Study

Oxide thin films can be widely used in the fields of microelectronics, optoelectronics and microelectronic mechanism systems. Electronic devices have been integrated with development of information age, therefore, devices were transformed from the tradition to thin films devices and from separated to integrated devices. Microstructure, strain, surface topography and efficiency of oxide thin films could influence on efficiencies of thin films devices and systems.X diffraction methods of Sin2Ψ, high resolution and reciprocal space map were used to investigate residual stresses of BST, CFO and YBCO oxide thin films in this paper .what's more, the relation between residual stresses and microstructure of thin films was also investigated. As following:1) BST thin films were prepared on Pt/SiO2/Si(100) substrates by RF sputtering, then annealed in the different temperature (550℃, 600℃, 650℃, 700℃, 750℃). X-ray diffraction Results indicate that BST thin films were all perovskite structure, (100) preferred orientation, internal stresses of BST thin films were tensile stresses, in addition, internal stresses were anisotropy, surface stress and shear stress were press stresses. Crystal grain size is unanimous in the interior and surface of the thin films.2) CFO thin films were prepared on BTO-STO substrates by molecular beam epitaxy (MBE), Microstructure and residual stress of CFO thin films of different deposition time were investigated, Then, magnetic efficiency of CFO thin films of different deposition time was also investigated .Results showed that the CFO thin films had steady crystal structure, diffraction maximum shifted from left to right and diffracted intensity increased with the thin films deposition time increasing. Tensile stress transforms to press stresses during thin films growing. There are strong magnetic anisotropy efficiencies in CFO thin films.3) YBCO thin films of different thickness were deposited on LAO substrate by MOD method. Effect of the thickness of YBCO film on microstructure was studied by X-ray diffraction. Results show Crystallization is observed the best at about 800nm with increasing YBCO films thickness, but becomes weaker after 800nm . Lattice parameter c becomes bigger with increasing the thickness of films. Rocking curve FWHM andφscanning of the different thickness of YBCO films were investigated, then reciprocal space mapping of the 800nm YBCO thin film was investigated too. Results show crystallization of the 800nm YBCO thin film is better than others. Finally, we studied effect of the thickness of YBCO film on critical electricity density.