Ferroelectric Thin Films, Semiconductor Thin Film Stress Of X-ray Diffraction Study

With the rapid development of information technology, thin film microelectronic devices have been widely used ever. While the rapid development of information technology, people need a large ferroelectric or semiconductor properties of thin film materials using modern composite technology for the scale of different functions into one integrated composite board, constitutes excellent performance with a variety of composite material systems. Therefore, the performance of thin film materials and preparation of the laboratory is currently widely internationally important topics of concern.Stress is an important factor which can't be ingored among so many factors influencing the performance of semiconductor thin films. The existence of stress will affect directly on yield,stable and reliability of thin films. As we known, the bandgap in semiconductor thin films will be influenced by stress.In the Introduction of this master thesis, the impact of the stress on the components, the causes of stress within the stress model and the factors that affect the aspects of stress of the films were reviewed. Based on the proposed purpose of this paper, namely through the study of film stress to improve the film properties, thereby increasing the reliability and stability of the components. Then the stress on the current test methods commonly used in films were reviewed, as X-ray diffraction characteristics of non-destructive testing and high accuracy, X-ray diffraction this choice as the primary means of film stress characterization.The thesis presented differents measurement of the residual stress based onφscan, high resolution reciprocal space, grazing incidence, the pole figure, etal, which are applied to investigate the residual stress state of the YBCO thin films with a STO buffer layer, the BST ferroelectric thin film and the ZnO semiconductor thin film respectively. This is not only measured the residual stress of the BST ferroelectric thin films by the traditional method of X-ray, but the reciprocal space map and the grazing incidence were also successfully used in the highly textured YBCO films and the stress measurement of the ZnO thin films, and the relationship of the film stress, the microstructure of the film and the film properties was discussed. We found that the growth conditions and the texture epitaxial growth of the YBCO thin films with a STO buffer layer prepared on the LAO substrate were better; in the residual stress analysis of the BST ferroelectric thin films with different ramp temperture, three-dimensional stress was found in these thin films, the stress was anisotropic during the annealing process; The results of grazing incidence strain analysis performed on the ZnO semiconductor films showed the variation of the film stress and the tensile stress, by calculateing the c/a value of the samples, we found that the films and the ideal hexagonal close packed structure close to the heap. Compareing the conventional XRD (002) and grazing incidence diffraction (100) of the rocking curve FWHM, we get the reasult of the incline of ZnO film insert block is smaller than the torque, that is the vertical direction of the lattice constant is more orderly than the one inside. Through the reciprocal space scan analysis, we found that the substrate is not perfect and with stress on its surface. So in order to preara the better thin films with excellent properties, the substrate selection must be crucial.These results obtained in these researches are complementary to the current study of the residual stress in the ferroelectric thin films and semiconductor thin films.