In Pecvd Fluorinated Carbon Films Prepared By The Process And Mechanism Study

The fluorinated carbon film will be a potential material as the IC isolation medium, and it is becoming one of the rivalrous candidate medium dielectric constant materials to instead of the SiO2 for the higher density and higher speed IC in the future because of its' lower dielectric constant and good thermal stability, the film will increase the speed and efficiency of IC. In this paper, the author summarized the characters, preparation methods and application of the thin films, based on the summarization of others' works, many fluorinated carbon films were prepared in different deposition conditions by PECVD method, the source gases were CF4and CH4, the substrates were glass, quartz and wafer. The thickness and dielectric constant were measured, the relations of deposition rate and dielectric constant between deposition techniques were studied; the refractive index were measured, and by the ultraviolet and visible light analysis, the paper researched the optic properties; the chemical structure was studied by infrared analysis; the paper also studied the surface topography by SEM and AFM analysis. Considering the deposition conditions, the article put forward the appropriate techniques of preparing fluorinated carbon film, and the paper will be helpful for the prepare techniques of high speed IC in the future. The experiments testified that ideal fluorinated carbon films could be prepared by control the deposition conditions.