The Research And Application Of Light Trapping Based On The Zinc Oxid Nano-structure

Improving the light trapping is an important way to enhance the efficiency of solar cell,It is a traditional method to use textured Si wafer for Si crystal solar cell to light trapping,which with pyramids was etched by etching solution. Si thin-film solar cells often employtextured back reflector for increasing the absorb of light. Nano-structure attract more andmore attention as a novel light trapping structure.ZnO nanorod structure was synthesized on glass substrate, the AZO thin filmdeposited on glass substrate by DC magnetron spurting act as the seed layer. The density ofthe control column array was controlled by using the method of acetic acid etching seedlayer. The ZnO nanorods were fabricated on Si substrate with pyramids by hydrothermalmethod. In this method, zinc acetate dissolved in ethanol solution play a role in seedsolution, the seed layer was grown by dipping. The effect of seed solution concentrationand annealing temperature were systemically studied. Zn(NO3)2/HMT act as precursorsolution for ZnO nanorods. The effect of growth temperature, growth solutionconcentration, growth time and DAP concentration were studied.To the n-i-p type μc-Si: H solar cell, the short circuit currents (Jsc) obtained from μc-Si:H solar cell with ZnO nanorods is17.98mA/cm2, which is higher than the μc-Si: H solarcell without ZnO nanorods16.76mA/cm2. The ZnO nano-structure grown on Si wasapplied in HIT solar cell. the short circuit currents (Jsc) got from HIT solar cell without ZnOnano-structure is30.37mA/cm2. While the short circuit currents (Jsc) obtained from HITsolar cell with ZnO nanorods and tips are32.30mA/cm2and33.78mA/cm2respectively.