Preparation And Opto-electrical Properties Study Of Sn O2-based Transparent Conductive Oxide Films

Tin oxide（SnO₂） is a wide band gap semiconductor, which band gap and the exciton binding energy is 3.6 e V and 120 me V respectively. SnO₂ has stable physics and chemical properties, which don’t react with dilute acid and alkali. It shows good corrosion and thermal stability. At the same time it has excellent combination with glass and ceramic materials. SnO₂ is a good transparent conductive material, which transmittance in the visible light region（400nm-800nm） is over than 80%.In this paper we used pulsed laser deposition method to prepared multilayered SnO₂-based transparent conductive oxide film on quartz substrate（15mm×15mm）, and we studied the effect of film’s thickness, prepared and annealing temperature to the film’s optical and electrical property. The main work of this paper includes the following aspects:In chapter 1, we mainly introduced the current research background and research status about transparent conductive films and the classification and application about transparent conductive films simply. And then, we introduced the current research background and problems of TCO/Metal/TCO film, in order to educe the meaning of this paper.In chapter 2, we introduced the commonly used methods to prepare transparent conductive films, and we also gave an introduction to pulsed laser deposition method, which we used in this paper. Finally, we briefly introduced the testing method about this paper.In chapter 3, we studied the effect of film’s thickness, prepared and annealing temperature to the opto-electrical properties of the SnO₂/Au/SnO₂ transparent conductive film. When we studied the influence of film’s layer thickness to the film’s property, we found that the Au layer thickness influence the film’s electrical property seriously. When the Au layer thickness is 8 nm, and the total thickness of SnO₂ layer is 80 nm respectively, the film has the best figure of merit, which is 3.9×10-3 ?-1, and the average transmittance of the film in the light visible region is 77.32%, the sheet resistance is 19.6 ?/sq. And then we studied the effect of temperature to the film’s thickness. According to the study, we find that the film has the best property, when the film is prepared at room temperature; while the film’s property can be improved by annealing at appropriate temperature. When the annealing temperature is 200 ℃, the figure of merit is 6.77×10-3 ?-1, and the sheet resistance and average transmittance is 16.1 ?/sq and 80.11%.In chapter 4, we mainly studied the effect of TCO（Zn O and SnO₂） layer thickness to the opto-electrical property of Zn O/Au/SnO₂ film. Compared with SnO₂/Au/SnO₂ film, Zn O/Au/SnO₂ film also has excellent photoelectric properties. When the total thickness of TCO layer is 100 nm, the average transmittance of the film can reach to 78.336%, and the figure of merit is 3.37×10-3 ?-1.In chapter 5, we used Ag to prepare SnO₂/Ag/SnO₂ film, and studied its property. When the Ag layer is 10 nm, the top and bottom thickness of SnO₂ is 40 nm respectively, the film has the best figure of merit is 4.76×10-3 ?-1.In chapter 6, we make a summary about our work, and we also recognize the deficiencies in the work, defined the direction of future research.