| ZnO is aⅡ-Ⅵsemiconductor material with a band gap of 3.3 eV and higher exciton binding energy approximately 60 meV, and it is very stable in ambient environments. Pure and doped zinc oxide have attracted intensive attention from scientists because of its remarkable electrical and optical properties and widely used for production of green-blue ultraviolet, light-emitting devices, solar cells, piezoelectric sensors, thin planar waveguides and transparent conductive oxide films. Especially for ZnO-based transparent conductive thin films, the study has recently attracted wide attention.The contents are as follows:1. Research progress and prospects transparent conductive thin films were introduced along with the preparation methods of ZnO-based transparent conductive film. Also the RF magnetron sputtering technique and a range of research tools and analysis methods were highlighted. In addition, we also introduced the related laboratory equipment, and the improvement of doped ZnO films'electro-optical performance was studied, too.2. Dy doped ZnO nano-films were synthesized by RF magnetron sputtering on Si and glass substrates. The thin films were characterized by XRD, FESEM and UV-VIS technology, respectively. All nano-films showed hexagonal wurtzite structure with preferred orientation, and the lattice constant c increased when the Dy doping content increased from 0.3 at.% to 4.0 at.%. We considered that the grains could recrystallize when the Dy dopant amount was excess. The optical transmittance of Dy doped ZnO films was about 90% and the indirect bandgap increased from 3.26 to 3.34eV with the Dy doping content increasing, that proved the band gap is continuously tunable.3. Zr-doped ZnO nano thin films were deposited by radio frequency (RF) magnetron sputtering. The influence of Zr element on the structure, morphology and optical property of ZnO films were investigated. As the Zr doped content increases, ZnO nano films show various morphologies. The optical band gap of pure ZnO films increases from 3.25eV to 3.53 eV with Zr concentration increasing to 10 at%. After annealing, pure samples'surface morphology and optical property changes greatly. It is suggested that the Zr doped ZnO films exhibit excellent hot stability. After annealed, we have made the resistivity of Zr doped ZnO thin film as small as 8.5×10-1Ω·cm. 4. The basement was heated, in order to study the structure and morphology of the prepared Zr doped ZnO thin films, we also regulated the sputtering process of critical process parameters-oxygen partial pressure. The results show that after heating the basement, when the partial pressure of oxygen to 0.2Pa, Zr doped ZnO thin films show the amount of the higher preferred orientation, grain size of the films is the biggest, and the films have higher degree of crystallization. The transmittance of ZZO films is more than 80%, and optical band gap is rising with the change of oxygen partial pressure. Substrate heating make ZZO films show a certain degree of electrical conductivity, and the change of oxygen partial pressure also leds to the different resistivity of thin films, When the partial pressure of oxygen roses to 0.2Pa, the resistivity decreases to 3.5×10-1Ω·cm.
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