The Preparation And Electrical Properties Research Of PT/PZT Multilayer Composite Thin Films

PZT ferroelectric thin films which have the advantage of high pyroelectric coefficient and the curie temperature, low dielectric loss can be widely used. In this paper, three different structures multilayer composite thin films based on PT and PZT are fabricated on silicon substrates by sol-gel method, pure PZT, PT/PZT-PZT/PT and PT/PZT/-/PZT/PT multilayer thin films respectively. From the experimental aspects, we study the preparation, microstructure and properties of the multilayer thin films.The surface morphology of the thin films are examined by FESEM; The crystal orientation of the thin films are analyzed by XRD; The dielectric properties are measured using an impedance analyzer; The P-V curve is measured using a ferroelectric test system. The test results show that the PT/PZT/-/PZT/PT thin films show a uniform particle size structure、the minimum dielectric constant and dielectric loss、the maximum infrared detection rate. The PT/PZT/-/PZT/PT structure thin films have the low remnant polarization than the pure PZT, but the remnant polarization of PT/PZT/-/PZT/PT structure thin films can increase from 1.58μc/cm2 to 15μc/cm2 after 1×106 cycling.This paper further analyzes the effect of different annealing times to PT/PZT/-/PZT/PT structure thin films. Experiments show that the annealing time of 20 min is the best annealing time.The result show that the PT/PZT/-/PZT/PT structure thin films obtain good performance and can be applied in infrared sensors.