| Entering the 21 st century, human have higher request and expectation to the development of science and technology, more emphasis on green materials.SrAl2O4:Eu2+,Dy3+ as an advanced light-emitting material has a wider range of uses in the printing, plastic, paint, glass enamel, textile other industry due to its excellent performance and green mode of production. There are many methods to prepare SrAl2O4:Eu2+,Dy3+, and high temperature solid state method is the most commonly used method in industrial production. With the rapid development of nano technology, it is difficult to predict, nano scale of luminescent material will have new applications in future microelectronic technology. In the synthesis methods of nano materials, Vapor deposition method is used frequently and most likely to be integrated into the microelectronic technology and micro-fabrication technology. In order to improve the luminescence properties of SrAl2O4:Eu2+,Dy3+, we have synthesized them by different experimental conditions and experimental methods.Firstly, SrCO3, Al2O3, Eu2O3 and Dy2O3 were mixed in a certain proportion, and study the effect of reaction temperature, reaction time, and the ratio of Eu2O3 and Dy2O3 on the luminescence properties of the products prepared by a high temperature solid-state method.Results show: The optimal reaction temperature of SrAl2O4:Eu2+,Dy3+ was 1500℃, and the best reaction time was 180min; In the synthesis of: Eu2+, the luminescence intensity is the largest when SrAl2O4 doped with 2wt% Eu2O3, the afterglow performance is best when SrAl2O4 doped with 1.5wt% Eu2O3; In the synthesis of SrAl2O4:Eu2+,Dy3+, the luminescence intensity and afterglow performance is best when SrAl2O4 doped with 2wt% Eu2O3 and4wt% Dy2O3. Through the summary of the experimental results, we found that the luminescence properties are presented a parabolic rise and fall with the change of the experimental conditions, it is first raised to a vertex and then quickly reduced.SrAl2O4:Eu2+,Dy3+nanowires were synthesized by thermal chemical vapor deposition(TCVD) method, its diameter is uniform distributed between 50 ~ 80 nm, with he length varying from 4μm to 20μm. It is monoclinic structure and its characteristic peaks correspond to 517 nm. Different forms outcome is change with location, which, from high temperature tolow temperature, are nanowires, nanocones, nanoparticles and nanosegment. The optimum deposition temperature is 1200℃, when the temperature is higher, it is difficult to control the growth of the nanowires. The growth mechanism is in accordance with the VLS mechanism.The optimal deposition time is 180 min. When the synthesis time is short, the nanowires are short and bent. When the synthesis time is long, the products bifurcate, and the diameter distribution is uneven.At last, the coating is coated on the silicon wafer by laser beam modulation coating method. Using a wavelength of 248 nm, the trigger frequency of 2Hz laser on the already pressed into a piece of SrAl2O4:Eu2+,Dy3+ bombardment, the substrate and the target distance is about 50 mm, substrate heating constant temperature of 300℃, the duration of 60 min. A layer of film is formed on the substrate, the film thickness is about 70 ~ 80 nm, and the coating is firm. Experimental results show that the substrate heating temperature and substrate target distance is two conditions for the greatest impact on the experiment. |
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