Investigation On Growth And Properties Of β-Ga₂O₃ Thin Films And Self-catalytic β-Ga₂O₃ Microwires

β-Ga₂O₃ is a Ш-VI clan direct wide band gap semiconductor materials with a bandgap of 4.2-4.9eV, it also has stable structure properties and stable optoelectronic properties, thus it has become one of the research hotspots in the field of oxide semiconductor materials. β-Ga₂O₃ could be widely applied to solar blind detectors, deep ultraviolet transparent conductive thin films, gas sensors and thin film transistors. The β-Ga₂O₃ material to achieve in these studies in the field of application, the premise is to get high quality β-Ga₂O₃ thin films and nano/micro materials. According to the present research hotspots and difficulties on β-Ga₂O₃, the higher quality β-Ga₂O₃ films were prepared on Si substrate by chemical vapor deposition method, and on the basis of the preparation of the n type β-Ga₂O₃/p-type Si heterojunction devices, and the use of self-catalytic VLS growth mechanism, high purity gallium catalyst source material and the successful preparation of the large size of β-Ga₂O₃ microwires, and its properties were investigated. The major research achievements are listed below:（1） β-Ga₂O₃ thin films with different gallium mass were grown on p-type Si substrates by chemical vapor deposition method, and on the basis of the preparation of the n type β-Ga₂O₃/p-type Si heterojunction devices. The results showed that the quality of crystal and surface morphology of samples are improved with decreasing gallium mass. The n type β-Ga₂O₃/p-type Si heterojunction devices shows a good rectifying characteristics. These results also confirm that the high-quality β-Ga₂O₃ thin films can be prepared by the simple chemical vapor deposition method, which opens the way for simple preparation of materials applied to β-Ga₂O₃ based opto-electronic device.（2） The large size of β-Ga₂O₃ microwires were successfully prepared with high purity gallium as the source material and catalyst by chemical vapor deposition method, using of self-catalytic VLS growth mechanism. By scanning electron microscope（SEM）, energy disperse spectroscopy（EDS）, X-ray diffraction（XRD）, photoluminescence（PL） test means proceed for β-Ga₂O₃ microwires characterization of morphology, crystal structure and optical properties representation. The results confirmed that the growth pattern of β-Ga₂O₃ microwires is self-catalytic VLS growth mechanism. The preparation of the β-Ga₂O₃ microwires of 5μm at the bottom diameter, and the top is about 20μm in diameter, the length of up to 500μm. In addition, the photoluminescence also observed that the oxygen vacancies（VO）, the gallium vacancies（VGa）, the gallium-oxygen vacancy pairs（VGa-VO） caused by defects.