Research On The Electroluminescence Performance Of Heterojunction N-ZAO/P-Diamond

Diamond film not only has the same with natural diamond crystal structure, butalso has high hardness, high wear resistance, wide band gap, wide light permeability,corrosion resistance and other characteristics. Tool filed, heat sink field and opticalapplications are particularly in need of its these excellent properties, so it has a verybroad application prodpect, which has became one of people’s research hot spot.In optical applications, we know the diamond film is promising materials toproduce blue area electroluminescent device. So, the article will use microwave plasmachemical vapor deposition and electron beam physical vapor deposition system tofabricate heterojunctions diamond electroluminescent device, in this experiment, wecontinuously improve the structure of the device and improve technology. The final wefabricated structure as silicon/diamond/boron/ZAO, silicon/diamond/boron/diamond/ZAO and silicon/diamond/boron/diamond/SiO2/ZAO electroluminescentdevices. Then we apply related equuiment detects and analyses the composition of thesamples、 spectral properties,and the relationship between luminous intensity and theexcitation voltage. Finally, the experimental results are analyzed and summarized.Through testing on the structure of silicon/diamond/boron/ZAOelectroluminescent devices, we found that, when the external DC voltage instructionsnumber is85V, luminescence brightness of the device reaches the maximum and whichis distinguished for white light by naked eye. And we got the main peak is located inyellow luminescence spectroscopy at590nm, two peaks were located in the blue regionat638and in the red region at485nm.Through testing on the structure of silicon/diamond/boron/diamond/ZAOelectroluminescent devices, we found that, when the external DC voltage instructionnumber is85V, luminescence brightness of the device reaches the maximum and whichis distinguished for slant green white light by naked eye. And we got the main peak islocated in green luminescence spectroscopy at525nm, a small peak was located in thered region at638nm.Through testing on the structure of silicon/diamond/boron/diamond/SiO2/ZAOelectroluminescent devices, we got three peaks locat in blue region at485nm、yellowregion at590nm and red region at638nm, and when the external DC voltage isconnected, the device is emitting white light, the result is same to expected. Also after AV test we find that, when the external DC voltage is very small, device begins to glow,and as the voltage increases, the electric current increase, it explain that SiO2effect.In this paper, a lot of research has been done about diamond electroluminescent,and has made a device which has good glow effect. I hope to make contribution for thedevice realize practical.