Apply Of Porous Silicon Microstructure

Porous silicon(PS) is one of promising materials because of its Simple technology and large reserves of raw materials.PS as field emission cathode is the first type cold cathode material. Its biggest advantage are integrated with control circuitry,small size and light weight. In addition, due to its high porosity and large specific surface area,and conducived to gas sensing, is considered an ideal carrier of thin film growth.PS films were fabricated by anode oxidation and cathode deoxidize surface dispose technology. The surface morphology of the PS films were characterized by atomic force microscopy(AFM),and the cross-section of the PS films were characterized by scanning electron microscopy(SEM). Surface roughness,hole diameter and film thickness were studied under different etching time. Studied the etching time on the porous silicon field emission properties of impact. In order to improve PS films field emission properties, Plasma treatment was used.And Plasma treatment can effctively improve field emission properties. chen the applied electric field for the 15 V·μm-1,the current density can be achieved 125μA·cm-2, more than 3 times of before plasma treatment. We have also designed one kind of porous silicon field-emission light emitting diodes array,and conducted performance test.Laser-induced breakdown spectroscopy Technology was used to detect characteri-stic spectral lines. The spectrum of palladium was observed from the PS after immersion without the spectrum of chlorine. Element content of the samples was measured via X-ray spectrometer.Pd element content increased gradually with the immersion time, and then stabilized at around 12.5%. Resistivity of the sample was measured via four-point probe. The resistivity of the sample before immersion higher...