Preparation And Magnetic Mechanism Of Cr-doped ZnO Thin Film

Semiconductors doped with magnetic metallic elements have been the frontier research objects in the field of material science because of the possibility of assembling charge and spin degrees of freedom in a single substance. As one of the II–VI compound semiconductors, ZnO has drawn much attention because theoretical studies predicted room-temperature ferromagnetism in a semiconducting ZnO recently when doped with suitable magnetic ions. In this paper, magnetic transition metallic elements Cr was introduced into ZnO by the radio frequency magnetron sputtering method.The magnetization behaviors and the origin of ferromagnetism of Zn1 ? xCrxO samples were studied.In the beginning the study background and application perspectives of DMS were introduced, together with some theoretical research and experimental progress of the DMS based on ZnO. Then the preparation process and the possible magnetic interactions of the Zn1 ? xCrxO samples have been introduced. At last the structure, the surface composition and the magnetization behaviors of Zn1 ? xCrxO samples have been investigated on experiment.1. Based on the XRD, it is suggested that the Zn exited in the crystal ZnO is partly substituted by the doped-Cr and the doped-ZnO still keeps its Wurtzite structure. The secondary phase is not found within the sensitivity of our apparatus.2. Based on the SEM, it indicates that the surface of the sample has something related with the doped-Cr, but still keeps its original characteristics.3. Based on the XPS, it suggests that the oxygen vacancy does not exit in the process we used.4. Based on the PPMS, it suggests that all the films were ferromagnetic at room temperature.Their ferromagnetism has something related with the consistency of the doped- Cr and depends on the competitive interactions between ferromagnetism and anti-ferromagnetism.