Growth And Its Properties Of GaMnN Film Based On ECR-PEMOCVD

Dietl et al predicted theoretically that the GaMnN should result in a Curie temperature exceeding room temperature in 2000,and background material GaN can obtain the widespread application in high temperature and high efficiency photoelectric device area.In this work,the growth at low temperature and its characteristics of GaMnN diluted magnetic semiconductor(DMS) fills are studied.Our work was supported by the national natural science foundation of China(the self-organized growth and characteristic of GaN based diluted magnetic semiconductor quantum dot #60476008).The experiments were carried out on the Electron Cyclotron Resonance-Plasma Enhanced Metal Organic Chemistry Vapor Deposition(ECR-PEMOCVD) equipment which is equipped Reflection High Energy Electron Diffraction(RHEED) to monitor in situ.Before this work, our group has studied the growth of GaN film at low temperature,and obtained the optimum growth technology.Based on this work,we introduced the Mn to the GaN films to study the DMSfilms.DMS film GaMnN was grown on the sapphire(0001) substrate using Cp2Mn,N2 and TEGa.In this work,GaMnN film has been grown by using ECR-PEMOCVD.Comparing with normal Metal Organic Chemical Vapor Deposition(MOCVD),ECR-PEMOCVD needs much lower temperature,which is adequate for growing single phase GaMnN DMSs.The single phase GaMnN film was successfully grown on the substrate of sapphire (a-Al₂O₃) by ECR-PEMOCVD.The samples were analyzed by XRD,AFM and RHEED for the characterization of film's structure and the pattern of surface.The Mn concentration is confirmed by Electronic Probes.SQUID(superconducting quantum interference device) measurement showed the magnetism character of the samples.The graphs of RHEED presented a clear spot-like lattice and the surface was not very glossy,which showed that the GaMnN film was single crystalline and its growth model was three -dimensional island.XRD analysis showed that the film was hexagonal structure with c -axis oriented and the crystallinity was very well.The AFM test result showed that the GaMnN films were composed of many submicron grains with the same orientation.SQUID measurement showed an apparent ferromagnetic hysteresis at room temperature,and the Curie temperature of the film was about 400k.With aggregate analysis the ferromagnetic of GaMnN film only probably come from GaMnN,and we found that the GaMnN with 2%Mn show the highest degree of ordering for per Mn atom.