Preparation And Relative Properties Of ZnO Based Diluted Magnetic Semiconductor

If we successfully produce diluted magnetic semiconductor, it can be as a base of the development of the spin electronic devices. In this paper, we analyze the magnetic origin of ZnO based diluted magnetic semiconductor.In the theory study we found that Mn-d up state is located in the valence band and all the states have heen taken up by the electronics. The up state and the down state have an energy gap, for this reason, it is very difficult for the ferromagnetism exchange interaction to emerge. If the system emerges the ferromagnetism exchange interaction, the system need an appropriate p-type denote.We analyzed all kinds of the denote properties of ZnO based diluted magnetic semiconductor system. We found that when N,Li are denoted in the ZnO or Zn vacancy existing in the ZnO, then the system can emerge the ferromagnetism exchange interaction, but Oxygen vacancy which exists in the ZnO system has nothing action to the magnetic property of the system.According to the analysis of the Mn and Co denoted ZnO system, we found that if the Mn denoted ZnO system emerge the ferromagnetism exchange interaction, the system needs an appropriate p-type denote, but to the Co denoted ZnO system, it needs nothing denote, the system can emerge just like the RKKY ferromagnetism exchange interaction which mediated by the electronics.In the experiment, we produced Mn doped ZnO based DMS and analyzed the properties of them. In the end, we found that there is nothing impurities existing when sintered at 500℃. It shows that Mn maybe has taken the place of Zn. But we found there are oxides of Mn existing when sintered at 900℃.According to the analysis of the magnetic properties of the bulks, we found that 2%Mn+0.5%Li is denoted in ZnO when sintered at 500℃or 5%Mn+0.5%Li is denoted in ZnO when sintered at 900℃, all the bulks have room temperature magnetic, the magnetic origin of the ZnO based diluted magnetic semiconductor can be analyzed by different theories.At the base of the bulks analysis, we produced Mn doped ZnO based DMS films by the PLD method and analyzed the properties of them. In the end, we found that aura to the structure of the films influence greater than the temperature. The lattice structures of the films which were deposited in the oxygen atmosphere are better than the films which were deposited in the vacuum atmosphere. It may be for the reason of the oxygen of the oxygen atmosphere refills the vacancy of the oxygen.